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Atomic Structure of Extended Defects in GaAs-based Heterostructures
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- Journal:
- Microscopy and Microanalysis / Volume 25 / Issue S2 / August 2019
- Published online by Cambridge University Press:
- 05 August 2019, pp. 2022-2023
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- August 2019
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Defect Evolution in GaAs-based Low-mismatch Heterostructures
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- Journal:
- Microscopy and Microanalysis / Volume 24 / Issue S1 / August 2018
- Published online by Cambridge University Press:
- 01 August 2018, pp. 6-7
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- August 2018
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Thickness-Dependent Defect Evolution in GaAs0.92Sb0.08/GaAs Heterostructures
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- Journal:
- Microscopy and Microanalysis / Volume 23 / Issue S1 / July 2017
- Published online by Cambridge University Press:
- 04 August 2017, pp. 1482-1483
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- July 2017
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Microscopic Investigation of Mono-layer/Multi-layer self-assembled InAs QDs on GaAs1-xSbx/GaAs Composite Substrates for Photovoltaic Solar Cells
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- Journal:
- Microscopy and Microanalysis / Volume 20 / Issue S3 / August 2014
- Published online by Cambridge University Press:
- 27 August 2014, pp. 554-555
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- August 2014
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Crystalline Perfection of Epitaxial Structure: Correlations with Composition, Thickness, and Elastic Strain of Epitaxial Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1167 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1167-O07-04
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- 2009
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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 467-473
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- 2000
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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W8.3
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- 1999
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